Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer-Reference-Cited by-同舟云学术

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Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer

Published:2022-07 Issue: Volume:262 Page:169362
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Liu Yue,Zhou YiJian,Peng WenBo,Zhang JiaHui,Xiang GuoJiao,Zhang JinMing,Huang HaoXuan,Mei MengYan,Zhao Yang,Wang Hui

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

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3. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes;Kyaw;Opt. Express,2014

4. Advances in the LED materials and architectures for energy-saving solid-state lighting toward “Lighting Revolution”;Tan;IEEE Photonics J.,2012

5. Recent advances and opportunities of lead-free Perovskite;Zhang;Adv. Energy Mater.,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction;Optics & Laser Technology;2025-01

2. Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes;Journal of Materials Chemistry C;2023

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