A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference35 articles.
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3. Effect of the quantum-well shape on the performance of InGaN-based light-emitting diodes emitting in the 400–500-nm range;Salhi;J. Display Technol.,2015
4. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition;Gerthsen;Appl. Phys. Lett.,2001
5. Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells;Chung;J. Appl. Phys.,2003
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