Effect of biasing voltage on quantum confinement in GaN/AlxGa1-xN nanowire structure-Reference-Cited by-同舟云学术

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Effect of biasing voltage on quantum confinement in GaN/AlxGa1-xN nanowire structure

Published:2017-05 Issue: Volume:137 Page:115-123
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Sonawane Ulhas S.,Samuel E.P.,Kasar C.K.,Patil D.S.

Funder

University Grants Commission, New Delhi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Nanosimulation of electron confinement in cerium doped zinc oxide nanowire structure for light emitting devices

2. Tailoring evanescent wave coupling in GaN/AlGaN core/cladding light-emitting diodes

3. Self-consistent analysis of electron transport in GaN/AlGaN super lattice nanostructure for light emission

4. 450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM

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1. The functional switching on the operating modes of a piezoelectric semiconductor bipolar junction transistor via mechanical loadings;International Journal of Mechanical Sciences;2024-02

2. Mechanical tuning methodology on the barrier configuration near a piezoelectric PN interface and the regulation mechanism on I–V characteristics of the junction;Nano Energy;2021-03

3. The Effect on the Optical Absorption Coefficients due to the Positions in the Plane of Square GaAs / Al(GaAs) Quantum Well Wire under the Laser Field;Acta Physica Polonica A;2019-12

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