Characterization of the nanosandwiched Ga2S3/In/Ga2S3 interfaces as microwave filters and thermally controlled electric switches

Author:

Alharbi S.R.,Nazzal Eman O.,Qasrawi A.F.

Funder

Deanships of Scientific Research (DSR) at Arab American University, Jenin, Palestine

King Abdulaziz University, Jeddah

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Zhang Mingjian, Guocong Guo, Huiyi Zeng, Xiaoming Jiang, Yuhang Fan, Binwen Liu, Optical parametric oscillator and second harmonic generator using monoclinic phase Ga2S3 crystal, U.S. Patent 9,513,532 (2016).

2. Effect of ytterbium, gold and aluminum transparent metallic substrates on the performance of the Ga2S3 thin film devices;Alharbi;Curr. Appl. Phys.,2017

3. Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates;Liu;ACS Appl. Mater. Interfaces,2014

4. Ga2S3: Optical properties and perspectives for THz applications. n Infrared, Millimeter, and Terahertz waves (IRMMW-THz);Huang;2015 40th International Conference On, IEEE,2015

5. Atomic layer deposition of gallium sulfide films using hexakis (dimethylamido) digallium and hydrogen sulfide;Meng;Chem. Mater.,2014

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