Atomic structure and optoelectronic properties of In0.53Ga0.47As (100) reconstruction surfaces: A DFT study

Author:

Guo Jing,Li Yuanyuan,Zhao Jing,Zhou Lei

Funder

innovation important research fund of NJIT

startup foundation for introducing talents of NJIT

National Natural Science Foundation of China for youth

Major Research Plan of the National Natural Science Foundation of China

Shandong provincial natural science foundation

startup foundation for introducing talents of NUIST

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Long-wavelength photoemission from Ga1-xInxAs alloys;Fisher;Appl. Phys. Lett.,1971

2. H.S. Kim, Method of fabricating a transmission mode InGaAs photocathode for night vision system, U.S. patent 5378640 (3 January 1995).

3. Image intensifier tube (I2) with 1.06-μm inGaAs-photocathode;Sachno;Proc. SPIE,2005

4. Modern theory and application of photocathodes;Spicer;Proc. SPIE,1993

5. Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)-As: a tool for determining the surface stoichiometry;Farrell;J. Vac. Sci. Technol. B: Microelectron. Nanometer. Struct.,1990

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