Influence of precursor solution volume on the properties of tin disulphide (SnS2) thin films prepared by nebulized spray pyrolysis technique
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference49 articles.
1. Photoelectrochemical characterization of indium nitride and tin nitride in aqueous solution;Lindgren;J. Sol. Energy Mater. Solar Cells,2002
2. New directions in tin sulfide materials chemistry;Giang;J. Mater. Chem.,1998
3. Preparation and optical properties of group IV-VI2 chalcogenides having the CdI2 structure;Greenaway;J. Phys. Chem. Solids,1965
4. Electronic behaviour of SnS2 crystals;Acharya;J. Phys. Status Solidi,1981
5. Fundamental optical absorption in SnS2 and SnSe2;Domingo;J. Phys. Rev.,1966
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrafast Shift Current in SnS2 Single Crystals: Structure Considerations, Modeling, and THz Emission Spectroscopy;Advanced Optical Materials;2024-04-13
2. Effect of substrate temperature on physical properties of Co doped SnS2 thin films deposited by ultrasonic spray pyrolysis;Chalcogenide Letters;2023-08
3. Annealing effect on the photocurrent response of SnS thin films prepared by the chemical spray pyrolysis method;Chalcogenide Letters;2023-08
4. High transmittance n-type tin-oxysulfide Sn(OxS2-x) heterojunction layer grown from surfactant mediated chemical bath deposition for thin film solar cells;Thin Solid Films;2021-09
5. Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides;Nanomaterials;2021-07-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3