Accumulation and recovery of disorder on silicon and carbon sublattices in ion-irradiated 6H–SiC
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference30 articles.
1. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
2. Structure and properties of ion-beam-modified (6H) silicon carbide
3. Ion implantation effects in silicon carbide
4. Ion-beam induced damage and annealing behaviour in SiC
5. Formation and development of disordered networks in Si-based ceramics under ion bombardment
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1. Atomistic analysis on implantation effects of hydrogen ions and copper ions into 4H-SiC;Applied Surface Science;2024-08
2. Thermal Conductivity Degradation and Microstructural Damage Characterization in Low-Dose Ion Beam-Irradiated 3C-SiC;Metallurgical and Materials Transactions E;2017-04-18
3. Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
4. Molecular dynamics simulation on the initial stage of 1 eV carbon deposition on silicon;Journal of Physics D: Applied Physics;2015-06-03
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