Polycrystalline silicon p-n junctions-Reference-Cited by-同舟云学术

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Polycrystalline silicon p-n junctions

Published:1978-05 Issue:5 Volume:21 Page:781-786
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chu T.L.,Chu Shirley S.,van der Leeden G.A.,Lin C.J.,Boyd J.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Polycrystalline silicon solar cells on low cost foreign substrates

2. Silicon solar cells on unidirectionally recrystallized metallurgical silicon

3. T.L. Chu and S.S. Chu, to be published

4. Conference Record, 9th IEEE Photovoltaic Specialists Conference;Stirn,1972

5. Diffusion lengths in solar cells from short‐circuit current measurements

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring;Solid-State Electronics;2000-04

2. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998

3. Switching characteristics of multigrain (polycrystalline silicon) barrier devices;IEEE Transactions on Electron Devices;1991

4. Electrical properties of polysilicon n+-i-p junctions;Semiconductor Science and Technology;1988-06-01

5. Conduction inn+‐i‐n+thin‐film polycrystalline/silicon devices in relation to the film deposition conditions;Journal of Applied Physics;1988-02-15

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