Switch-off transient analysis for heterojunction bipolar transistors in saturation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
2. Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistors
3. An Ebers-Moll model for the heterostructure bipolar transistor
4. Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors
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1. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023
2. Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor;Solid-State Electronics;1995-07
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