Current transport mechanisms studied by I-V-T and IR photoemission measurements on a P-doped PtSi Schottky diode-Reference-Cited by-同舟云学术

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Current transport mechanisms studied by I-V-T and IR photoemission measurements on a P-doped PtSi Schottky diode

Published:1993-08 Issue:8 Volume:36 Page:1107-1116
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chin V.W.L.,Green M.A.,Storey J.W.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Carrier transport across metal-semiconductor barriers

2. Reverse current-voltage characteristics of metal-silicide Schottky diodes

3. Current-voltage characteristics of silicon metallic-silicide interfaces

4. Conduction mechanism in PtSi/Si Schottky diodes

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