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Temperature behavior of insulated gate transistor characteristics

  • Published:1985-03 Issue:3 Volume:28 Page:289-297
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Baliga B.Jayant

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. The Insulated Gate Rectifier: a new power switching device;Baliga;Int. Electron. Devices Mtg. Paper 10.6,1982

2. The COMFET—A new high conductance MOS gated device;Russell;IEEE Electron. Device Lett.,1983

3. The Insulated Gate Transistor (IGT)—a new power switching device;Baliga,1983

4. Improved COMFETS with fast switching speed and high current capability;Goodman;Int. Electron Devices Mtg. Paper 4.3,1983

5. 25 amp, 500 volt Insulated Gate Transistors;Chang;Int. Electron Devices Mtg. Paper 4.4,1983

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1. A Novel Temperature Sensitive Electrical Parameter of IGBT Modules Without Involvement of Operating Parameters;IEEE Transactions on Electron Devices;2023-08

2. A Novel Junction Temperature Estimation Method Independent of Bond Wire Degradation for IGBT;IEEE Transactions on Power Electronics;2023-08

3. Creation of the Insulated Gate Bipolar Transistor;75th Anniversary of the Transistor;2023-07-03

4. IGBT Junction Temperature Monitoring Method Current Calibration Free Based on the Narrow Pulse Injection;IEEE Transactions on Industrial Electronics;2023

5. Insulated gate bipolar transistor;Encyclopedia of Electrical and Electronic Power Engineering;2023
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