A time- and temperature-dependent two-dimensional simulation of GTO turnoff process II—Inductive load case-Reference-Cited by-同舟云学术

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A time- and temperature-dependent two-dimensional simulation of GTO turnoff process II—Inductive load case

Published:1985-07 Issue:7 Volume:28 Page:677-687
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nakagawa Akio

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. H. Ohashi and A. Nakagawa, IEEE 1981 IEDM Technical Digest, p. 414

2. A study on GTO turn-off failure mechanism—A time- and temperature-dependent 1-D model analysis

3. T. Nagano, H. Fukui, T. Yatsuo and M. Okamura, PESC 1982 Record, p. 383

4. W. Anheier, W.L. Engl, O. Mank and A. Wieder, IEEE 1975 IEDM Technical Digest, p. 363

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1. Applications of blow-up theory to thyristor turn-on;IEEE Transactions on Electron Devices;2002

2. Fast gate turn-off in a merged thyristor-like structure;Solid-State Electronics;2000-10

3. Thyristors for Power Electronics;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

4. Waves of switching in thyristor-like structures;Solid-State Electronics;1999-03

5. Applications of bifurcation theory to thyristor turn-on and turn-off;Solid-State Electronics;1997-11

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