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Modified drift field model for high-low transition in solar cells

  • Published:1983-11 Issue:11 Volume:26 Page:1083-1088
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Dhariwal S.R.,Gadre R.,Kulshreshtha Arun P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Records 9th IEEE Photovoltaic Specialists Conf.;Mandelkorn,1972

2. Records 10th IEEE Photovoltaic Specialists Conf.;Mandelkorn,1973

3. Physical operation of back-surface-field silicon solar cells

4. Records 10th IEEE Photovoltaic Specialists Conf.;Godlewski,1973

5. The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlight

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of drift fields in thin silicon solar cells;Solar Energy Materials and Solar Cells;1997-01-15

2. Analytical model of the effective recombination velocity of diffused p−p+ (n−n+) high-low junctions at arbitrary injection level;Solid-State Electronics;1994-01

3. Some aspects of the multi-interface structure for BSF solar cells;Solar Energy Materials and Solar Cells;1993-12

4. Anomalously fast charge collection in partially depleted p+n−n+ silicon detectors for alpha-particle absorption through the high-low junction;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1990-06

5. An optimum base drift field for a p-n junction solar cell;Journal of Physics D: Applied Physics;1990-01-14
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