Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p+-nGaAs diodes-Reference-Cited by-同舟云学术

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Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p+-nGaAs diodes

Published:1983-07 Issue:7 Volume:26 Page:699-703
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brudnyi V.N.,Vilisov A.A.,Gaman V.I.,Diamond V.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p+-n-n+ GaAs diodes;Solid-State Electronics;1988-06

2. Electric and tensoelectric study of radiation defects in GaAs;Soviet Physics Journal;1986-10

3. Electrical measurements of the electron irradiation induced E- and H-traps in GaAs under hydrostatic pressure;Solid State Communications;1985-04

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