MIS electroluminescent diodes in ZnTe-Reference-Cited by-同舟云学术

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MIS electroluminescent diodes in ZnTe

Published:1970-06 Issue:6 Volume:13 Page:755-758
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Donnelly J.P.,Foyt A.G.,Lindley W.T.,Iseler G.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Isolation of junction devices in GaAs using proton bombardment

2. TYPE CONVERSION ANDp‐nJUNCTION FORMATION IN ION‐IMPLANTED ZnTe

3. Radiation Recombination in Semiconductors;Fischer,1964

4. Physics and Chemistry of II–VI Compounds;Morehead,1967

5. EVIDENCE FOR AVALANCHE INJECTION LASER INP‐TYPE GaAs

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Light Output from ZnTe Light Emitting Diodes by Utilizing Thin Film Structure;Applied Physics Express;2009-12-04

2. Electroluminescence from ZnTe MIS Structure using Natural Oxide as Insulating Layer;e-Journal of Surface Science and Nanotechnology;2009

3. Waveguide Fabrication Techniques;Integrated Optics;2009

4. Waveguide Fabrication Techniques;Advanced Texts in Physics;2002

5. Waveguide Fabrication Techniques;Integrated Optics;1995

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