Correlation of experiments with a two-section-model theory of the saturation drain conductance of MOS transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
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1. Physical Insight into Thermal Behaviour of Power DMOSFET and IGBT: A Two-Dimensional Computer Simulation Study;physica status solidi (a);2001-06
2. Analysis of the output conductance of insulated gate transistors;IEEE Electron Device Letters;1986-12
3. Le transistor M.O.S. de puissance en régime de saturation : la résistance de saturation et les effets de faible multiplication;Revue de Physique Appliquée;1982
4. Silicon Power Field Controlled Devices and Integrated Circuits;Silicon Integrated Circuits;1981
5. A review of two dimensional long channel mosfet modeling;Microelectronics Reliability;1980-01
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