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On the semi-insulating polycrystalline silicon resistor

  • Published:1984-11 Issue:11 Volume:27 Page:995-1001
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Lee Ming-Kwang,Lu Chih-Yuan,Chang Kun-Zen,Shih Chintay

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Use of Laser Trimming for the Fabrication of High Precise n–p Compensation-Doped Polycrystalline Silicon Thin-Film Resistors;Journal of Computational and Theoretical Nanoscience;2011-11-01

2. Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films;Japanese Journal of Applied Physics;2005-05-10

3. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998

4. Electrical Properties;Polycrystalline Silicon for Integrated Circuit Applications;1988

5. Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI;MRS Proceedings;1986
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