Model of doped-oxide-source diffusion in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Low concentration diffusion in silicon under sealed tube conditions
2. Intrinsic Diffusion of Boron and Phosphorus in Silicon Free From Surface Effects
3. Donor Diffusion Dynamics in Silicon
4. Dopant Diffusion in Silicon. III. Acceptors
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