The use of generalised models to explain the behaviour of ohmic contacts to n-type GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
2. Ion Implantation and Beam Processing;Baglin,1984
3. New explanation of ND−1 dependence of specific contact resistance for n-GaAs
4. Specific contact resistance of metal-semiconductor barriers
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1. Influence of activation of Si29+ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs;Radiation Effects and Defects in Solids;2008-09
2. The impact of the surface roughness on the electrical properties of AuGeNi/n-InP ohmic contacts;Semiconductor Science and Technology;1995-05-01
3. Au/Pd/Te ohmic contacts on n-type InP;Solid-State Electronics;1994-07
4. Properties of Au-Ge ohmic contacts after the alloying process;Solid-State Electronics;1994-01
5. Ohmic contacts of Au and Ag to p-GaSb;Solid-State Electronics;1994-01
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