Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. The graded‐gap Alx Ga1 − x As–GaAs heterojunction
2. A simplified model for graded-gap heterojunctions
3. Double-heterojunction photocathode devices
4. Interface studies of AlxGa1−xAs‐GaAs heterojunctions
5. Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
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