A new intermediate state model for the GTO: Relation to the turn-off process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Fast gate turn-off in a merged thyristor-like structure;Solid-State Electronics;2000-10
2. Waves of switching in thyristor-like structures;Solid-State Electronics;1999-03
3. Numerical simulation of an optoelectronic thyristor in the regime of incomplete turn-off;International Journal of Electronics;1998-03
4. Effect of base parameters on the gate-controlled squeeze of a current-conducting region in pnpn structures;Solid-State Electronics;1996-06
5. Failure mechanism of GTO devices and optimization for minimum current crowding during turn-off;International Journal of Electronics;1994-12
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