Wave-guiding properties of stripe-geometry double heterostructure injection lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. STRIPE‐GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE
2. SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATURE
3. Electromagnetic theory of heterostructure injection lasers
4. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
5. Fourth Annual Conf. on Solid State Devices;Selway,1970
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1. Analysis of waveguiding properties of traveling-wave semiconductor laser amplifiers using perturbation technique;Fiber and Integrated Optics;1992-01
2. Chapter 2 Heterojunction Laser Diodes;Semiconductors and Semimetals;1979
3. Heavily doped semiconductors and devices;Advances in Physics;1978-11
4. Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biasedp-njunctions;Journal of Applied Physics;1978-05
5. The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers;Journal of Applied Physics;1978-03
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