Determination of energy density distribution and capture cross-section of interface states in the metal-nitride-oxide-semiconductor (MNOS) structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Surface states at steam-grown silicon-silicon dioxide interfaces
2. FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
3. Interface states in SiSiO2 interfaces
4. Series equivalent circuit representation of SiO2Si interface and oxide trap states
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1. Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage;Journal of Applied Physics;2011-04-15
2. Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures;Semiconductor Science and Technology;2001-08-28
3. Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors;Materials Science in Semiconductor Processing;2001-02
4. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure;Journal of Applied Physics;1997-11-15
5. Effect of Doping on the Interface States in Au Schottky Contact to p-In0.21Ga0.79As Grown on GaAs by Metal Organic Vapour Phase Epitaxy;MRS Proceedings;1993
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