Comparison of dry etching techniques for InGaP, AlInP and AlGaP-Reference-Cited by-同舟云学术

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Comparison of dry etching techniques for InGaP, AlInP and AlGaP

Published:1996-07 Issue:7 Volume:39 Page:1109-1112
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hong J.,Lee J.W.,Santana C.J.,Abernathy C.R.,Lambers E.S.,Pearton S.J.,Hobson W.S.,Ren F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures

2. Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy

3. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

4. Wet Chemical Etching of Al0.5In0.5 P

5. Fabrication of self-aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective etching of AlGaInP laser structures in a BCl3/Cl2inductively coupled plasma;Semiconductor Science and Technology;2006-03-07

2. Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors;Journal of The Electrochemical Society;2003

3. Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-05

4. Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries;Journal of Electronic Materials;1998-03

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