Breakdown voltage of diffused epitaxial junctions-Reference-Cited by-同舟云学术

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Breakdown voltage of diffused epitaxial junctions

Published:1991-12 Issue:12 Volume:34 Page:1313-1318
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bulucea Constantin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Physics and Technology of Semiconductor Devices;Grove,1967

2. Transistors—Fundamentals for the Integrated-Circuit Engineer;Warner,1983

3. Measurement of the ionization rates in diffused silicon p-n junctions

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3. Analysis of the depletion layer of exponentially graded p-n junctions with nonuniformly doped substrates;IEEE Transactions on Electron Devices;2000

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