Radiation hardened 12T SRAM cell with improved writing capability for space applications

Author:

Sharma Rishabh,Mondal DebabrataORCID,Shah Ambika PrasadORCID

Publisher

Elsevier BV

Reference12 articles.

1. Novel low-power and highly reliable radiation hardened memory cell for 65 nm CMOS technology;Guo;IEEE Trans. Circuits Syst. I. Regul. Pap.,2014

2. Energy-efficient dual-node-upset-recoverable 12T SRAM for low-power aerospace applications;Pal;IEEE Access,2023

3. Radiation-hardened, read-disturbance-free new-quatro-10T memory cell for aerospace applications;Wen;IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,2020

4. Design of area-efficient and highly reliable RHBD 10T memory cell for aerospace applications;Guo;IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,2018

5. Highly Stable Soft-Error Immune SRAM with Multi-Node Upset Recovery for Aerospace Applications, Integration, Vol 92;Bai,2023

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1. Novel Radiation Hardened Pre-Discharge Sense Amplifier for Double Data Rate Magnetic Random Access Memory;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07

2. Unveiling the Potential of 12T SRAM for Enhanced Performance and Efficiency;2024 3rd International Conference on Applied Artificial Intelligence and Computing (ICAAIC);2024-06-05

3. Physical Insight into Single-Event Upsets of DICE Circuits and Hardening Strategy;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

4. A 14T Radiation Resistant Self-Recoverable SRAM Cell;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15

5. An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors;Microelectronics Reliability;2024-01

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