X-ray exposure characteristics of diazo-type photoresist using synchrotron radiation-Reference-Cited by-同舟云学术

X-ray exposure characteristics of diazo-type photoresist using synchrotron radiation

Published:1986-01 Issue:4 Volume:4 Page:251-267
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Mochiji Kozo,Kimura Takeshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Exposure characteristics of electron beam resists for synchrotron X-ray lithography;Kimura;Proceedings SPIE Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II,1983

2. Conventional novolak resists for storage ring lithography;Lane;J. Vac. Sci. Technol. B,1983

3. On the characteristics of the orbital radiation of electron synchrotron of INS;Oshio;Oyobuturi,1968

4. Characterization of positive photoresist;Dill;IEEE Trans. Electron Devices,1975

5. Photochemical decomposition mechanism for AZ-type photoresists;Pacansky;IBM J. Develop.,1979

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1. Dissolution dynamics of soft x-ray exposed novolak resist films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11

2. Electron beam lithography resolution upon exposure of superthick resist layers;Microelectronic Engineering;1989-05

3. Process control with chemical amplification resists using deep ultraviolet and x-ray radiation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-11