Fabrication of 100 nm polysilicon-emitter transistors using e-beam lithography-Reference-Cited by-同舟云学术

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Fabrication of 100 nm polysilicon-emitter transistors using e-beam lithography

Published:1995-02 Issue:1-4 Volume:27 Page:91-94
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Webster M.N.,Tuinhout A.,Verbruggen A.H.,Romijn J.,Radelaar S.,Lo¨chel B.,Jos H.F.F.,Moors P.M.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. High contrast marks for e-beam direct write made by reactive ion etching

2. Metallization of submicron microwave bipolar transistors by electroplating

3. Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors

4. Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

5. A simple method for separation of the internal and external (peripheral) currents of bipolar transistors

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