An organosilicon photoresist for use in excimer laser lithography-Reference-Cited by-同舟云学术

An organosilicon photoresist for use in excimer laser lithography

Published:1987-12 Issue:1-4 Volume:6 Page:393-398
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Orvek Kevin J.,Cunningham Wells C.,McFarland Janet C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Excimer laser-based lithography for 0.5 μm device technology;Bennewitz,1986

2. Resists for used in 248 nm excimer laser lithography;Orvek,1986

3. Characterization of a new organosilicon photoresist;Cunningham,1987

4. A new positive optical resist for bilayer resist systems;Buiguez,1984

5. Approaches to resists for two-level RIE pattern transfer applications;Reichmanis;Solid State Technology,1985

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