High contrast marks for e-beam direct write made by reactive ion etching-Reference-Cited by-同舟云学术

High contrast marks for e-beam direct write made by reactive ion etching

Published:1992-03 Issue:1-4 Volume:17 Page:37-40
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Webster M.N.,Verbruggen A.H.,Jos H.F.F.,Romijn J.,Moors P.M.A.,Radelaar S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Composition and detection of alignment marks for electron‐beam lithography

2. Alignment Signals from Symmetrical Silicon Marks for Electron Beam Lithography

3. High‐contrast registration marks for electron‐beam pattern exposure on (100) silicon

4. The etching mechanism of titanium polycide in a mixture of SF6and O2

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