Proxy — A new approach for proximity correction in electron beam lithography-Reference-Cited by-同舟云学术

Proxy — A new approach for proximity correction in electron beam lithography

Published:1992-03 Issue:1-4 Volume:17 Page:413-416
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Aristov V.V.,Erko A.I.,Gaifullin B.N.,Svintsov A.A.,Zaitsev S.I.,Jede R.R.,Raith H.F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Corrections to proximity effects in electron beam lithography. I. Theory

2. Guaranteed accuracy of the method of ‘simple’ compensation in electron lithography

3. Point exposure distribution measurements for proximity correction in electron beam lithography on a sub-100 nm scale

4. Computer aided proximity correction for direct write E-beam lithography

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy dependence of proximity parameters investigated by fitting before measurement tests;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11

2. Three-dimensional design in electron-beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11

3. High resolution Bragg-Fresnel optics for nanometer scale methods with soft X-rays;Le Journal de Physique IV;1994-11

4. Accuracy of proximity correction in electron lithography after development;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-11