Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants-Reference-Cited by-同舟云学术

Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants

Published:1992-09 Issue:1-4 Volume:19 Page:447-450
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Robbins DJ,Leong WY,Glasper JL,Pidduck AJ,Jackson R,Post IRC,Shafi ZA,Ashburn P

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Heterojunction bipolar transistors using Si-Ge alloys

2. The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

3. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

4. A model for heterogeneous growth of Si1−xGexfilms from hydrides

5. Integration of Si-MBE and Device Processing

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1. Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology;IEEE Transactions on Electron Devices;1997-05

2. Real-time control of layer thickness in LPCVD Si/Si.88Ge.12 HBT structures;Thin Solid Films;1997-02

3. Structural studies of ion beam synthesised heterostructures for HBT applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

4. A study of base contact formation in epitaxial HBT structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

5. Structural studies of ion beam synthesised SiGe/Si heterostructures for HBT applications;Ion Beam Processing of Materials and Deposition Processes of Protective Coatings;1996