The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface-Reference-Cited by-同舟云学术

The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

Published:2023-01 Issue: Volume:292 Page:117243
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Ulusoy Murat,Badali Yosef,Pirgholi-Givi Gholamreza,Azizian-Kalandaragh Yashar,Altındal Şemsettin

Funder

Gazi Üniversitesi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes;Card;J. Phys. D Appl. Phys.,1971

5. Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer;Reddy;Thin Solid Films,2014

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