Dopant profiling based on scanning electron and helium ion microscopy-Reference-Cited by-同舟云学术

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Dopant profiling based on scanning electron and helium ion microscopy

Published:2016-02 Issue: Volume:161 Page:51-58
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Chee Augustus K.W.,Boden Stuart A.

Funder

(University of Southampton)

(University of Cambridge)

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Mechanism for secondary electron dopant contrast in the SEM

2. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

3. Dopant profiling with the scanning electron microscope—A study of Si

4. Mapping electrically active dopant profiles by field‐emission scanning electron microscopy

5. Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

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2. Field Ion Sources for Research and Modification of the Structure of Amorphous and Crystalline Materials;Crystallography Reports;2024-02

3. Development of a Customized Blockchain Technology-Based Parameter Matching Protocol for Semiconductor Manufacturing;IEEE Access;2024

4. Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope;Reports on Progress in Physics;2021-09-15

5. Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods;Semiconductor Science and Technology;2021-06-29

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