Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures-Reference-Cited by-同舟云学术

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Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures

Published:1991-01 Issue: Volume:137-138 Page:895-898
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Bertran E.,López-Villegas J.M.,Andújar J.L.,Campmany J.,Canillas A.,Morante J.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Plasma Deposited Thin Films,1986

2. Contamination effects in glow discharge deposition systems

3. Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films

4. Real time controlled rf reactor for deposition of a-Si:H thin films

5. In situ optical characterizations for rf plasma deposited a-Si: H thin films

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the porosity of RF sputtered Ta2O5 thin films on their optical properties for electrochromic applications;Solid State Ionics;2003-12

2. Mechanical properties of nanometric structures of Si/SiC, C/SiC and C/SiN produced by PECVD;Diamond and Related Materials;2001-07

3. Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications;Thin Solid Films;1999-04

4. Optical properties, microstructure and composition of SixN1−x prepared at low temperatures by laser induced CVD;Applied Surface Science;1996-10

5. Silicon nitride and oxynitride films;Materials Science and Engineering: R: Reports;1994-07

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