The role of nitrogen in sputtered a-Si:H, a-Ge:H and a-Si56Ge44:N:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Wide Optical-Gap, Photoconductive a-SixN1-x:H
2. The effects of nitrogen incorporation on the properties of RF sputtered a-Six Ge1 − x alloys
3. Properties of hydrogenated amorphous germanium nitrogen alloys prepared by reactive sputtering
4. Electrical and optical properties of amorphous SixN1−x
5. Investigation of nitrogen incorporation into a-Si:H prepared by dc-magnetron sputtering
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1. Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03
2. Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04
3. Nitrogen in germanium;Journal of Applied Physics;1998-07
4. Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition;Journal of Applied Physics;1996-10-15
5. Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma;Japanese Journal of Applied Physics;1996-04-15
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