Physical aspects of a-Si:H image sensors-Reference-Cited by-同舟云学术

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Physical aspects of a-Si:H image sensors

Published:1987-02 Issue:1-3 Volume:90 Page:243-246
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Hoheisel M.,Brunst G.,Wieczorek H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Proceedings of the MRS;Rosan,1986

2. Characterization of junctions between transparent electrodes and a-Si:H

3. N. Brutscher, M. Hoheisel, to be published

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphous silicon X-ray detectors;Journal of Non-Crystalline Solids;1998-05

2. Microstructure and etching properties of sputtered indium—tin oxide (ITO);Physica Status Solidi (a);1991-02-16

3. Temperature dependence of the photocurrent in pin and nip solar cell structures made from a-Si:H;Journal of Non-Crystalline Solids;1991-01

4. Amient-induced defect states at a-Si:H/ITO interfaces;Journal of Non-Crystalline Solids;1989-12

5. Relaxation phenomena of image sensors made froma‐Si:H;Journal of Applied Physics;1989-11

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