Gas-source molecular beam epitaxy of MgZnSSe for fabricating blue/green laser diodes-Reference-Cited by-同舟云学术

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Gas-source molecular beam epitaxy of MgZnSSe for fabricating blue/green laser diodes

Published:1996-11 Issue:2 Volume:169 Page:293-298
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Imaizumi Masayuki,Endoh Yasuyuki,Suita Muneyoshi,Sugimoto Hiroshi,Ohtsuka Ken-ichi,Isu Toshiro,Ozeki Tatsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Advances in blue laser diodes

2. Blue‐green laser diodes

3. Continuous-wave, room temperature, ridge waveguide green-blue diode laser

4. Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers

5. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 7.1.6 Quantum wells and superlattices based on ZnSe and its alloys;Growth and Structuring;2013

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