Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells
2. Proc. of the 5th Int. Conf. on InP and Related Materials;Pelzer,1993
3. Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate
4. Proc. EW-MOVPE V. Malmö;Gyuro,1993
5. Detailed models of the MOVPE process
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