Iodine and arsenic doping of (1 0 0)HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT
2. Iodine doping in mercury cadmium telluride (Hg1−xCdxTe) grown by direct alloy growth using metalorganic chemical vapor deposition
3. Metalorganic chemical vapor deposition of HgCdTe p/n junctions using arsenic and iodine doping
4. Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy
5. p-type doping of metalorganic chemical vapor deposition-grown HgCdTe by arsenic and antimony
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1. Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors;Journal of Applied Physics;2017-10-14
2. Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition;12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods;2017-09-01
3. Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth;Mercury Cadmium Telluride;2010-09-04
4. The effect of ammonium sulfide treatment on interfacial properties in ZnS/HgCdTe heterostructure;Journal of Electroceramics;2006-12
5. Doping of epitaxial layers and heterostructures based on HgCdTe;Semiconductors;2006-01
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