Evaluation of thin Si films grown on Ge (1 0 0) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si 2 H 6
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption
2. Gas and adsorbate excitation pathways in synchrotron radiation excited Si growth using disilane
3. Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy
4. Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. II. Photochemical‐vapor deposition
5. Synchrotron‐radiation‐excited epitaxy of Ge with GeH4
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