Optical and structural properties of GaInAs/InP single quantum wells grown by solid-source MBE with a GaP decomposition source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE
2. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
3. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy
4. Operational aspects of a gallium phosphide source of P2 vapor in molecular beam epitaxy
5. Electronic properties of InGaP grown by solid‐source molecular‐beam epitaxy with a GaP decomposition source
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1. Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources;Physica E: Low-dimensional Systems and Nanostructures;2006-05
2. InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source;Solid State Communications;2006-04
3. InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source;SPIE Proceedings;2004-03-30
4. Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Source;Chinese Physics Letters;2003-08-29
5. InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth;Semiconductor Science and Technology;2003-04-10
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