The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates-Reference-Cited by-同舟云学术

The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Published:1999-02 Issue:1-2 Volume:197 Page:12-18
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cheng T.S.,Novikov S.V.,Lebedev V.B.,Campion R.P.,Jeffs N.J.,Melnik Yu.V.,Tsvetkov D.V.,Stepanov S.I.,Cherenkov A.E.,Dmitriev V.A.,Korakakis D.,Hughes O.H.,Foxon C.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Materials issues for InGaN-based lasers

4. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

5. Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

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