Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Transistor performance and electron transport properties of high performance InAs quantum-well FET's
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Competing relaxation mechanisms in strained layers
4. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
5. Surface Stress and Self-Organization of Steps
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1. Atypical dependence of excited exciton energy levels and electron-hole correlation on emission energy in pyramidal InP-based quantum dots;Scientific Reports;2022-01-07
2. Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces;Physical Review Materials;2019-08-26
3. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
4. High resolution STEM of quantum dots and quantum wires;Micron;2013-01
5. 6.5.6 Growth of InAs quantum dashes;Growth and Structuring;2013
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