MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances-Reference-Cited by-同舟云学术

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Published:2003-04 Issue:1-4 Volume:251 Page:811-815
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cordier Y.,Semond F.,Lorenzini P.,Grandjean N.,Natali F.,Damilano B.,Massies J.,Hoël V.,Minko A.,Vellas N.,Gaquière C.,DeJaeger J.C.,Dessertene B.,Cassette S.,Surrugue M.,Adam D.,Grattepain J-C.,Aubry R.,Delage S.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. GaN MESFETs on (111) Si substrate grown by MOCVD

2. AlGaN/GaN high electron mobility transistors on Si(111) substrates

3. AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length

4. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

5. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

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