Growth related distribution of secondary phase inclusions in 6H–SiC single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. SiC Seeded Crystal Growth
2. The mechanism of micropipe nucleation at inclusions in silicon carbide
3. Defect origin and development in sublimation grown SiC boules
4. Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation
5. Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates
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1. Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method;Materials Science Forum;2020-07
2. Vapor Transport Growth of Wide Bandgap Materials;Handbook of Crystal Growth;2015
3. Formation and suppression of misoriented grains in 6H-SiC crystals;CrystEngComm;2011
4. Optimization of structural perfection of 4H-polytype silicon carbide ingots;Semiconductors;2009-09
5. Misoriented domain formation in 6H-SiC single crystal;Journal of Crystal Growth;2009-07
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