X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
2. Laterally overgrown structures as substrates for lattice mismatched epitaxy
3. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
4. GaN/SiC heterojunction bipolar transistors
5. X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
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1. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate;CrystEngComm;2013
2. Phase transitions of CaTiO3 ceramics sintered with the aid of NaF and MgF2;Solid State Sciences;2009-01
3. Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN;Applied Physics B;2008-11-29
4. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction;physica status solidi (b);2006-06
5. X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN;physica status solidi (a);2006-05
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