Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
2. Effect of matrix on InAs self-organized quantum dots on InP substrate
3. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
4. Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening
5. Independent manipulation of density and size of stress-driven self-assembled quantum dots
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ monitoring of the growth procedure of InAs layer by spectral reflectance;Journal of Crystal Growth;2007-01
2. Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition;Applied Physics Letters;2005-05-30
3. InP-based quantum dash lasers for wide gain bandwidth applications;Journal of Crystal Growth;2005-05
4. The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD;Physica E: Low-dimensional Systems and Nanostructures;2005-02
5. Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2005-02
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