Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

Author:

Song J.S,Chang J.H,Hong S.K,Cho M.W,Makino H,Hanada T,Yao T

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015

2. Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-03

3. Growth mechanism of ZnO low-temperature homoepitaxy;Journal of Applied Physics;2011-09

4. Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates;Journal of Applied Physics;2010-06-15

5. Optical properties and electrical properties of heavily Al-doped ZnSe layers;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03

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