Characterization of GaAs on MnZn ferrite with a MnAs buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
2. Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers
3. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
4. Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
5. Epitaxial growth of MnAs on single-crystalline Mn–Zn ferrite substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures;Journal of Crystal Growth;2004-01
2. Room-temperature epitaxial growth of GaN on conductive substrates;Applied Physics Letters;2003-10-13
3. Characteristics of AlN buffer layers for GaAs epitaxial growths on MnZn ferrite substrates;Thin Solid Films;2003-07
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